Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts
Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts
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DOI：
10.1021/nn301302n
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发表时间：
2012-05-01
期刊：
影响因子：
17.1
通讯作者：
Leonard, Francois
中科院分区：
文献类型：
--
作者：
Cummings, Aron W.;Leonard, Francois
我们使用数值模拟来分析具有钯触点的短沟道碳纳米管场效应晶体管的最新实验测量结果。我们表明，栅极强烈调节接触特性，这种效应与肖特基势垒碳纳米管晶体管中观察到的效应不同。通过栅极对接触进行的这种调制可以实现短沟道的优异亚阈值摆幅，并改善缩放行为。这些结果进一步阐明了碳纳米管金属接触的行为，并且应该有助于高性能碳纳米管电子器件的优化。
We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that Is distinct from that observed in Schottky barrier carbon nanotube transistors. This modulation of the contacts by the gate allows for the realization of superior subthreshold swings for short channels, and improved scaling behavior. These results further elucidate the behavior of carbon nanotube metal contacts, and should be useful in the optimization of high-performance carbon nanotube electronics.