Real-Space Transfer and Trapping of Carriers into Single GaAs Quantum Wires Studied by Near-Field Optical Spectroscopy
Real-Space Transfer and Trapping of Carriers into Single GaAs Quantum Wires Studied by Near-Field Optical Spectroscopy
复制标题
通过近场光谱研究载流子在单根砷化镓量子线中的实空间转移和捕获
DOI：
--
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
K. Ploog
中科院分区：
文献类型：
--
作者：
A. Richter;G. Behme;M. Sueptitz;C. Lienau;T. Elsaesser;M. Ramsteiner;R. Nötzel;K. Ploog
我们报道了在图案$(311)A$ GaAs表面生长的单GaAs量子线的首次近场光学研究。在10 K温度下的空间分辨光谱给出了一维载流子约束和子带结构的证据。在300 K时，连续态的电子-空穴对通过空穴迁移率和光声子发射捕获来进行数微米长的扩散实空间转移。量子线中载流子的光学声子散射在线态和连续态下建立了准平衡载流子分布。
We report the first near-field optical study of single GaAs quantum wires grown on patterned $(311)A$ GaAs surfaces. Spatially resolved optical spectra at a temperature of 10 K give evidence for one-dimensional carrier confinement and subband structure. At 300 K, electron-hole pairs in continuum states undergo diffusive real-space transfer over a length of several microns determined by hole mobility and trapping by optical phonon emission. Optical phonon scattering of carriers in the quantum wire establishes a quasiequilibrium carrier distribution in both wire and continuum states.