The study of the optical properties of the GaAs with point defects
The study of the optical properties of the GaAs with point defects
复制标题
点缺陷GaAs光学性质的研究
DOI：
10.1016/j.ijleo.2013.06.084
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发表时间：
2014
期刊：
影响因子：
3.1
通讯作者：
Jing Guo, Benkang Chang, Mingzhu Yang, Honggang Wang, Meisha
中科院分区：
文献类型：
--
作者：
Jing Guo, Benkang Chang, Mingzhu Yang, Honggang Wang, Meisha
GaAs 是负电子亲和势光电阴极的常用材料。它在夜视领域有着广泛的应用。 GaAs生长过程中不可避免地会产生点缺陷。本文采用第一原理方法计算了GaAs中常见的六种点缺陷的形成能和光学性质。根据形成能计算，这六种类型中更容易形成三类点缺陷（Ga空位缺陷、As反位缺陷和As间隙缺陷）。事实上，砷化镓晶体是在富含砷的环境中生长的。现实中更容易形成Ga空位、As反位和As填隙缺陷。因此理论计算结果与实验结果是一致的。在本文中，这三种类型的光学特性与完美 GaAs 的光学特性进行了比较。点缺陷导致电子结构发生变化。一些缺陷能级进入带隙，电子跃迁变得更容易。它使光谱向低能区移动。此外，具有Ga空位缺陷的GaAs和具有As间隙缺陷的GaAs表现出相似的光学特性。因此，在以后的实验中，这两类缺陷可以认为是相同的。本文的理论结果为真实GaAs材料的光电发射与光学性质和电子结构相关的实验研究提供了基础。
GaAs is a common material for negative electron affinity photoelectric cathodes. It has a widely application in night vision. It is unavoidable to produce point defects in the process of the GaAs growth. In this article, the first principle method is used to calculate the formation energy and the optical properties of six types familiar point defects in GaAs. Three types of point defects (Ga vacancy defect, As antisite defect and As interstitial defect) are easier to be formed in these six types according to the formation energy calculation. In fact, crystal GaAs is grown in an As-rich environment. The Ga vacancy, As antisite and As interstitial defects are easier to be formed in reality. Hence the theoretical calculation results are in keeping with the experiments. In this article, the optical properties of these three types are compared with that of perfect GaAs. The electron structures are changed as a result of the point defects. Some of the defect levels enter into the band gap and the electron transitions become easier. It makes the optical spectra move to the low-energy region. Additionally, GaAs with Ga vacancy defect and that with As interstitial defect shows similar optical properties. Therefore both of the two types of defects can be considered as the same in the later experiments. The theoretical results in this article provide the basis for experimental study for photoelectric emission of the real GaAs material related to the optical properties and electronic structures.
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DOI：
10.1117/12.221575
发表时间：
1995-09
期刊：
--
影响因子：
--
作者：
A. Baum;W. Spicer;R. Pease;K. Costello;V. Aebi
通讯作者：
A. Baum;W. Spicer;R. Pease;K. Costello;V. Aebi
影响因子：
3.7
作者：
MONKHORST, HJ;PACK, JD
通讯作者：
PACK, JD
影响因子：
3.7
作者：
MONKHORST, HJ;PACK, JD
通讯作者：
PACK, JD
DOI：
10.1103/physrevb.51.10568
发表时间：
1995-04
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
Neugebauer;Van de Walle CG
通讯作者：
Neugebauer;Van de Walle CG
影响因子：
3.7
作者：
C. S. Wang;B. M. Klein
通讯作者：
C. S. Wang;B. M. Klein