Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates
Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates
复制标题
通过在预图案化基板上分子束外延再生长形成的 GaAs 金字塔微结构的光学表征
DOI：
10.1063/1.1376419
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发表时间：
2001
影响因子：
3.2
通讯作者：
T. Jones
中科院分区：
文献类型：
--
作者：
R. Pritchard;R. Oulton;P. Stavrinou;G. Parry;R. S. Williams;M. Ashwin;J. Neave;T. Jones
利用分子束外延再生技术，在预图像化的GaAs（001）衬底上制备了长度为1 ~ 5 μm的方形（001）基的GaAs金字塔阵列。利用λ=900 ~ 1000 nm入射光的微反射和微透射成像测量方法，研究了金字塔表面的光学特性。数字化电荷耦合器件图像表明，在{110}锥面处发生全内反射，并且在锥面不发生过度生长的情况下，其反射率大于80%。这些特性表明，这种结构可能适合作为新型微米尺度垂直微腔器件的顶镜。
Arrays of GaAs pyramids with square (001) bases of length 1–5 μm have been fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical properties of the pyramid faces have been studied by microreflection and microtransmission imaging measurements with light (λ=900–1000 nm) incident through the pyramid base. Digitized charge coupled device images indicate that total internal reflection occurs at the {110} pyramid facets and that their reflectivities are greater than 80%, provided overgrowth of the facets does not occur. These properties suggest that such structures may be suitable as the top mirror in novel micron-scale vertical microcavity devices.