Field-tuned superconductor?insulator transitions and Hall resistance in thin polycrystalline MoN films
Field-tuned superconductor?insulator transitions and Hall resistance in thin polycrystalline MoN films
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多晶 MoN 薄膜中的场调谐超导绝缘体转变和霍尔电阻
DOI：
10.1088/1361-648x/aa9e2e
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Shinozaki Bunju
中科院分区：
文献类型：
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作者：
Makise Kazumasa;Ichikawa Fusao;Asano Takayuki;Shinozaki Bunju
我们报告了（100）MgO衬底上无序氮化钼（MoN）薄膜的超导体-绝缘体转变（SIT）与薄膜厚度和磁场的函数关系。超导MoN膜的Tc，表现出尖锐的超导转变，单调下降的正常状态Rsq的增加，减少膜厚度。对于几种不同厚度的薄膜，我们用有限标度分析方法估计了临界场Hc和动力学指数z与关联长度指数ν的乘积zν <$0.6.该产品的价值可以用（2+ 1）XY模型来解释。我们发现当磁场满足HHP（T）时，霍尔电阻Δ Rxy（H）最大
We report on the superconductor–insulator transitions (SITs) of disordered molybdenum nitride (MoN) thin films on (1 0 0) MgO substrates as a function of the film thickness and magnetic fields. The T c of the superconducting MoN films, which exhibit a sharp superconducting transition, monotonically decreases as the normal state R sq increases with a decreasing film thickness. For several films with different thicknesses, we estimate the critical field H c and the product zν≃ 0.6 of the dynamical exponent z and the correlation length exponent ν using a finite scaling analysis. The value of this product can be explained by the (2+ 1) XY model. We found that the Hall resistance ΔR xy (H) is maximized when the magnetic field satisfies H HP (T)