Nanoindentating Mechanical Responses and Interfacial Adhesion Strength of Electrochemically Deposited Copper Film
Nanoindentating Mechanical Responses and Interfacial Adhesion Strength of Electrochemically Deposited Copper Film
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电化学沉积铜膜的纳米压痕机械响应和界面粘附强度
DOI：
10.1149/1.2006508
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
Yu
中科院分区：
文献类型：
--
作者：
Shou;Ting;Yu
为了评价互连线的可靠性，研究了电化学镀铜膜的纳米机械响应和界面粘附性。纳米压痕实验测得铜膜的硬度约为2.1 Gpa，弹性模数约为120 Gpa。观察到了位错破裂现象，揭示了铜膜塑性变形的开始。折算的真实应力-应变曲线为铜膜的塑性屈服提供了9.3 Gpa的应力判据。此外，在纳米压痕试验中还对其蠕变行为进行了分析，其蠕变应力指数约为22，符合幂函数关系。此外，利用四点弯曲试验研究了铜膜与碳化硅刻蚀阻挡层之间的界面结合强度和剥离行为。在分层过程中，裂纹不规则地沿铜/碳化硅界面扩展，并被韧性铜膜阻挡。测试结果表明，碳化硅沉积条件和测试参数对铜/碳化硅界面分层的断裂能释放率影响较大，约为2~10J/m2。
The nanomechanical responses and interface adhesion of electrochemically plated copper (Cu) film have been investigated for the evaluation of interconnect reliability. The hardness and elastic modulus of the Cu film were measured by nanoindentation test as about 2.1 and 120 GPa, respectively. A dislocation burst phenomenon was observed and revealed the initiation of plastic deformation of the Cu film. The converted true stress-strain curve provided a stress criterion of 9.3 GPa for the plastic yielding of the Cu film. Besides, the creep behavior was also analyzed under nanoindentation test and showed a power law expression with a creep stress exponent of about 22. Moreover, the interfacial adhesion strength and delamination behavior between the Cu film and silicon carbide (SiC) etch stop layer have been studied using a four-point bending test. During delamination, cracks irregularly propagated along the Cu/SiC interface with blocking by the ductile Cu film. The fracture energy release rate for the delamination of Cu/SiC interface was measured as around 2-10 J/m 2 , affected by SiC deposition condition and testing parameter.