Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode
Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode
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DOI：
10.1063/1.4868705
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发表时间：
2014-03
影响因子：
3.2
通讯作者：
A. Khalid;G. Dunn;R. F. Macpherson;S. Thoms;D. Macintyre;Chong Li;M. Steer;V. Papageorgiou;I. Thayne;Martin Kuball;C. Oxley;M. M. Bajo-M.;A. Stephen;J. Glover;D. Cumming
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文献类型：
--
作者：
A. Khalid;G. Dunn;R. F. Macpherson;S. Thoms;D. Macintyre;Chong Li;M. Steer;V. Papageorgiou;I. Thayne;Martin Kuball;C. Oxley;M. M. Bajo-M.;A. Stephen;J. Glover;D. Cumming
古恩二极管过渡区的长度决定了其工作于基模的固有频率--器件越短，工作频率越高。关于古恩二极管设计的长期观点是，对于功能器件，过渡区的最小长度约为1.5 μm，将器件限制在频率约为60 GHz的基模工作。通过更先进的蒙特卡罗技术对这些器件进行研究，模拟控制器件行为的弹道输运和电子-声子相互作用，提供了一个新的0.5 μm的下限，实验证据已经表明平面和垂直器件分别在600 nm和700 nm处表现出古恩操作。本文介绍了有史以来第一个太赫兹亚微米平面古恩二极管在InP衬底上的In0.53Ga0.47As制造，工作在300 GHz以上的基频。从600 nm激光器中获得了实验测量的28 μW射频功率.
The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode—the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600 nm and 700 nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 μW was obtained from a 600 nm lo...