INFLUENCE OF INSULATION GEOMETRY ON THE CURRENT AT MICRODISK ELECTRODES
INFLUENCE OF INSULATION GEOMETRY ON THE CURRENT AT MICRODISK ELECTRODES
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DOI:
10.1016/s0022-0728(84)80112-6
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发表时间:
1984-01-01
影响因子:
4.5
通讯作者:
SZABO, A
中科院分区:
文献类型:
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作者:
SHOUP, D;SZABO, A