Near-infrared InGaAs FPAs for Space Applications
Near-infrared InGaAs FPAs for Space Applications
复制标题
用于空间应用的近红外 InGaAs FPA
DOI:
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发表时间:
2009-08
影响因子:
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通讯作者:
Li, Tao
中科院分区:
文献类型:
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作者:
Li, Xue;Li, Yong-Fu;Zhang, Yong-Gang;Fang, Jia-Xiong;Wang, Yang;Tang, Heng-Jing;Gong, Hai-Mei;Zhang, Ke-Feng;Miao, Guo-Qing;Song, Hang;Ning, Jin-Hua;Li, Tao
The structure and main performance of InGaAs PIN detector are introduced. The progress of InGaAs detector, especially the key technology and main performance of InGaAs detector for space application of our country was reported. In recent years, InGaAs focal plane arrays (FPAs) have been developed rapidly to meet the requirements of space applications in our country. Both front side and backside illuminated 256×1 element linear InGaAs photodiode arrays have been fabricated for the 0.9 μm-1.7 μm spectra band. At room temperature, peak detectivity is 7.8×10^11 cm•Hz(superscript 1/2)/W and 4.5×10^11 cm•Hz(superscript 1/2)/W, respectively. Scanning images are obtained by using the front side one. The images are clear. Furthermore, the extended long-wavelength response InGaAs FPAs (~2.4 μm) with 256 elements are also developed, whose the peak detectivity is 2.5×10^10 cm•Hz(superscript 1/2)/W at room temperature. The research results provide a solid foundation for studying the longer linear FPAs. The performance needs further improvements for space application.