High-Temperature-Resistant Interconnections Formed by Using Nickel Micro-plating and Ni Nano-particles for Power Devices
High-Temperature-Resistant Interconnections Formed by Using Nickel Micro-plating and Ni Nano-particles for Power Devices
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功率器件用镍微镀和镍纳米颗粒形成的耐高温互连
DOI：
10.5104/jiepeng.6.87
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
K. Tatsumi
中科院分区：
文献类型：
--
作者：
Noriyuki Kato;S. Hashimoto;T. Iizuka;K. Tatsumi
互连技术的改进正在成为SiC器件高温运行的重中之重。我们提出了一种新的互连方法，使用镍电镀在芯片电极和基板引线之间形成键合。我们还新提出了低温镍纳米粒子烧结来形成芯片键合连接。采用这些新连接方法组装的 SiC 器件在 300°C 左右的高温环境下成功运行。我们确认，与传统互连相比，这些方法作为先进耐热封装具有足够的潜力。
The improvement of interconnection technology is becoming a top priority for the operation of SiC devices at high temperatures. We proposed a new interconnection method using nickel electroplating to form bonds between chip electrodes and substrate leads. We also newly proposed low-temperature nickel nanoparticle sintering to form die bonding connections. SiC devices assembled with these new connection methods operated successfully in a high-temperature environment of about 300°C. We confirmed that these methods had adequate potential as an advanced heat resistant package in comparison with conventional interconnections.