Inter- and intraband Coulomb interactions between holes in silicon nanostructures
Inter- and intraband Coulomb interactions between holes in silicon nanostructures
复制标题
硅纳米结构中空穴之间的带间和带内库仑相互作用
DOI：
10.1103/physrevb.104.205409
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发表时间：
2020
影响因子：
3.7
通讯作者：
F. Troiani
中科院分区：
文献类型：
--
作者：
A. Secchi;L. Bellentani;A. Bertoni;F. Troiani
我们提出了一个完整的推导的相互作用的哈密顿量的空穴在硅中的六带的双函数计划，适当地描述了价带接近$\boldsymbol{\Gamma}$点。考虑了单空穴本征态的完整结构，包括Bloch部分，库仑相互作用引起的散射过程被证明是带内和带间的，带间项主要是短程的。在渐近长程极限下，有效势趋向于屏蔽库仑势，并成为纯粹的带内，如在以前的模型中所假设的。我们的研究结果可以直接用于与硅纳米结构中的相互作用的空穴系统（如量子点）相关的实际精确对角化计算。
We present a full derivation of the interaction Hamiltonian for holes in Silicon within the six-band envelope-function scheme, which appropriately describes the valence band close to the $\boldsymbol{\Gamma}$ point. The full structure of the single-hole eigenstates is taken into account, including the Bloch part, and the scattering processes caused by the Coulomb interaction are shown to be both intraband and interband; the interband terms are mostly short-ranged. In the asymptotic long-range limit, the effective potential tends to the screened Coulomb potential, and becomes purely intraband, as assumed in previous models. Our findings can be directly used for realistic exact-diagonalization calculations related to systems of interacting holes in Silicon nanostructures, such as quantum dots.
影响因子：
56.9
作者：
Petta, JR;Johnson, AC;Gossard, AC
通讯作者：
Gossard, AC