Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
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DOI：
10.1109/led.2006.879046
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发表时间：
2006-07
影响因子：
4.9
通讯作者：
Ruonan Wang;Yong Cai;W. Tang;K. Lau;K.J. Chen
中科院分区：
文献类型：
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作者：
Ruonan Wang;Yong Cai;W. Tang;K. Lau;K.J. Chen
提出了一种集成增强/耗尽（E/D）模式AlGaN/GaN高电子迁移率晶体管（HEMTs）的平面制造技术。该技术在很大程度上依赖于CF4等离子体处理，该处理分为两个单独的步骤来实现两个目标：1)有源器件隔离和2)增强模式HEMT形成的阈值电压控制。利用平面工艺，将耗尽型和增强型AlGaN/GaN hemt集成在同一芯片上，并演示了直接耦合FET逻辑逆变器。与采用标准台面蚀刻技术制备的hemt相比，采用平面工艺制备的hemt具有相当的直流和射频特性，器件隔离度无明显差异。通过等离子体处理的器件隔离在400℃退火后保持不变，表明具有良好的热稳定性。在电源电压（VDD）为3.3 V时，E/ d型逆变器的输出摆幅为2.85 V，逻辑低噪声裕度和逻辑高噪声裕度分别为0.34 V和1.47 V
A planar-fabrication technology for integrating enhancement/depletion (E/D)-mode AlGaN/GaN high-electron mobility transistors (HEMTs) has been developed. The technology relies heavily on CF4 plasma treatment, which is used in two separate steps to achieve two objectives: 1) active device isolation and 2) threshold-voltage control for the enhancement-mode HEMT formation. Using the planar process, depletion- and enhancement-mode AlGaN/GaN HEMTs are integrated on the same chip, and a direct-coupled FET logic inverter is demonstrated. Compared with the devices fabricated by a standard mesa-etching technique, the HEMTs by a planar process have comparable dc and RF characteristics with no obvious difference in the device isolation. The device isolation by a plasma treatment remains the same after 400 degC annealing, indicating a good thermal stability. At a supply voltage (VDD) of 3.3 V, the E/D-mode inverters show an output swing of 2.85 V, with the logic-low and logic-high noise margins at 0.34 and 1.47 V, respectively