Sub-230nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode
Sub-230nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode
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DOI：
10.7567/jjap.55.05ff06
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发表时间：
2016-05-01
影响因子：
1.5
通讯作者：
Jena, Debdeep
中科院分区：
文献类型：
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作者：
Islam, S. M.;Protasenko, Vladimir;Jena, Debdeep
我们报道了在AlN矩阵中生长的1-2个单层GaN量子盘（QDs）在222-231 nm范围内可调谐的深紫外（DUV）发射。在5k时，发射线宽很窄，约为10 nm。磁盘在改良的Stranski-Krastanov （mSK）模式下生长。高分辨率扫描透射电子显微镜（STEM）图像证实在3 nm AlN屏障之间插入了1-2 ml的GaN。通过低温光致发光测量估计了内部量子效率，并与1和2 ML GaN量子阱/AlN势垒进行了比较。在222nm发射时，GaN量子点的内部量子效率（IQE）接近35%，比1ml GaN量子点高200%。(C) 2016 .日本应用物理学会
We report tunable deep-ultraviolet (DUV) emission over the 222-231 nm range from 1-2 monolayer (ML) GaN quantum disks (QDs) grown in an AlN matrix. The linewidth of the emission were as narrow as similar to 10 nm at 5 K. The disks were grown in modified Stranski-Krastanov (mSK) mode. High resolution scanning transmission electron microscopy (STEM) images confirmed insertion of 1-2 MLs of GaN between 3 nm AlN barriers. The internal quantum efficiency was estimated from low temperature photoluminescence measurements for the disks, and compared with 1 and 2 ML GaN quantum wells/AlN barriers. The internal quantum efficiency (IQE) of the GaN QDs was found to be similar to 35% for 222nm emission, similar to 200% higher than 1 ML GaN QWs. (C) 2016 The Japan Society of Applied Physics