Solution-Gated Epitaxial Graphene as pH Sensor
Solution-Gated Epitaxial Graphene as pH Sensor
复制标题
DOI：
10.1021/ja805090z
复制
发表时间：
2008-11-05
影响因子：
15
通讯作者：
Loh, Kian Ping
中科院分区：
文献类型：
--
作者：
Ang, Priscilla Kailian;Chen, Wei;Loh, Kian Ping
在少层石墨烯（FLG）上制备了溶液栅场效应晶体管（SGFET）。理想的可极化的石墨烯/水界面允许通过羟基（OH-）和水合氢离子（H3 O+）对表面进行电容充电。电导率对栅极电势曲线显示石墨烯的“V "形双极转移特性，空穴和电子迁移率分别为3600 cm（2）/Vs和2100 cm（2）/Vs。的负门电位与pH值的移位显示超能斯特响应99 meV/pH值。我们的工作点的潜在应用的石墨烯在超快和超低噪声的化学或生物传感器。
A solution-gate field effect transistor (SGFET) has been fabricated on few-layer graphene (FLG). The ideally polarizable graphene/aqueous interface allows the capacitive charging of the surface by hydroxyl (OH-) and hydroxonium ions (H3O+). The conductivity versus gate potential curve exhibits ''V'' shaped ambipolar transfer characteristics of graphene, with hole and electron mobilities of 3600 cm(2)/Vs and 2100 cm(2)/Vs, respectively. The shift of the negative gate potential with pH shows a supra-Nernstian response of 99 meV/pH. Our work points to the potential application of graphene in ultrafast and ultralow noise chemical or biological sensors.