Characterization of Pb x Pt y Alloy Formation on a Pt Substrate during Liquid-Delivery MOCVD of Pb ( Zr , Ti ) O3 Thin Films
Characterization of Pb x Pt y Alloy Formation on a Pt Substrate during Liquid-Delivery MOCVD of Pb ( Zr , Ti ) O3 Thin Films
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Pb ( Zr , Ti ) O3 薄膜液体输送 MOCVD 过程中 Pt 基底上 Pb x Pt y 合金形成的表征
DOI：
10.1149/1.2186038
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发表时间：
2006
影响因子：
3.9
通讯作者：
C. Hwang
中科院分区：
文献类型：
--
作者：
J. S. Zhao;Joon Seop Sim;Hyun Ju Lee;Dong;G. Hwang;K. Lee;C. Hwang
研究了在Pt电极上用金属有机物化学气相沉积（MOCVD）法制备PZT铁电薄膜过程中PbxPty合金的形成及其对Pb（Zr，Ti）O3（PZT）薄膜生长的影响。当在MOCVD期间在接近550°C的温度下供应过量的Pb前体和不足量的氧时，Pb沿着晶界扩散到Pt衬底中，导致合金层的形成。与较厚的Pt电极（150 nm）相比，较薄的Pt衬底（50 nm）由于Pb沿着更丰富的Pt晶界的更高扩散而增强合金层形成。由于PZT和合金之间更好的结构相容性，合金层增强了Pb结合到PZT膜中，并改善了顶部PZT层的结晶。当沉积温度为570°C时，合金形成在膜沉积的早期阶段开始，但在后期阶段（> 15min）经历热分解。因此，在初始降低<15 min的沉积时间后，获得恒定的Pb浓度。
Pb x Pt y alloy formation and its influence on Pb(Zr,Ti)O 3 (PZT) film growth during liquid-delivery metallorganic chemical vapor deposition (MOCVD) of ferroelectric PZT thin films on Pt electrodes are investigated. When an excessive amount of Pb precursor and a deficient amount of oxygen are supplied during MOCVD at temperatures near 550°C, Pb diffuses along the grain boundaries into the Pt substrate, causing the formation of an alloy layer. Compared to a thicker Pt electrode (150 nm), a thinner Pt substrate (50 nm) enhances the alloy layer formation due to the higher diffusion of Pb along the more abundant Pt grain boundaries. The alloy layer enhances the Pb incorporation into the PZT film and improves the crystallization of the PZT layer on top due to better structural compatibility between PZT and the alloy. When the deposition temperature is 570°C the alloy formation is initiated in the early stage of the film deposition but undergoes thermal decomposition in the later stage (> ∼ 15 min). Therefore, a constant Pb concentration is obtained after the initial decrease for a deposition period <15 min.