Optical properties and electronic band structure of Cu_2ZnSnSe_4 kesterite semiconductor
Optical properties and electronic band structure of Cu_2ZnSnSe_4 kesterite semiconductor
复制标题
Cu_2ZnSnSe_4黄锡矿半导体的光学性质和电子能带结构
DOI：
10.1002/pssc.201200203
复制
发表时间：
2012
期刊：
影响因子：
--
通讯作者：
S. Ozaki and T. Namba
中科院分区：
文献类型：
--
作者：
Tsuboi Nozomu;Tamogami Takashi;Kobayashi Satosh;T. Sameshima;S. Ozaki and T. Namba
通过光学吸收、椭圆偏振光谱和热反射测量研究了铜黄锡矿型半导体Cu2ZnSnSe4的光学性质。光学吸收测量表明，Cu2ZnSnSe4是一种直接带隙半导体，在300 K下的带隙为1.02 eV。通过光谱椭圆偏振法测量的复介电函数谱，ε（E）=ε1（E）+iε2（E），揭示了布里渊区中临界点能量处的不同结构。热反射光谱有助于临界点能量的精确测定。通过进行能带结构计算，这些临界点被成功地分配到布里渊区的特定点（© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Optical properties of a kesterite‐type semiconductor Cu2ZnSnSe4have been studied by optical absorption, spectroscopic ellipsometry, and thermoreflectance measurements. Optical absorption measurements suggest that Cu2ZnSnSe4is a direct‐gap semiconductor having the band gap of ∼1.02 eV at 300 K. The complex dielectric‐function spectra,ϵ(E)=ϵ1(E)+iϵ2(E), measured by spectroscopic ellipsometry reveal distinct structures at energies of the critical points in the Brillouin zone. Thermoreflectance spectrum facilitates the precision determination of the critical point energy. By performing the band‐structure calculation, these critical points are successfully assigned to specific points in the Brillouin zone (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)