A 5 nW Quasi-Linear CMOS Hot-Electron Injector for Self-Powered Monitoring of Biomechanical Strain Variations.
A 5 nW Quasi-Linear CMOS Hot-Electron Injector for Self-Powered Monitoring of Biomechanical Strain Variations.
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DOI：
10.1109/tbcas.2016.2523992
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发表时间：
2016-12
影响因子：
5.1
通讯作者：
Chakrabartty S
中科院分区：
文献类型：
--
作者：
Zhou L;Abraham AC;Tang SY;Chakrabartty S
压电驱动热电子注入器（p-HEI）用于生物力学植入物和结构中机械活动的自供电监测。先前报道的p-HEI装置通过从压电换能器收集能量以产生电流和电压参考来操作，所述电流和电压参考然后用于启动和控制热电子注入的过程。因此，激活器件所需的最小能量受到基准电路功率要求的限制。在本文中，我们提出了一种p-HEI设备，直接利用自限制能力的能量转换器驱动过程中的pMOS浮栅晶体管的热电子注入时，操作。因此，p-HEI器件可以在小于5 nW的输入功率水平下激活自身。使用0.5 μm体CMOS工艺制造的原型，我们验证了所提出的注入器的功能，并表明，对于固定的输入功率，其动态是准线性的相对于时间。本文还介绍了测量结果，使用的尸体幻影制造的p-HEI设备已集成与压电换能器，并用于自供电监测机械活动。
Piezoelectricity-driven hot-electron injectors (p-HEI) are used for self-powered monitoring of mechanical activity in biomechanical implants and structures. Previously reported p-HEI devices operate by harvesting energy from a piezoelectric transducer to generate current and voltage references which are then used for initiating and controlling the process of hot-electron injection. As a result, the minimum energy required to activate the device is limited by the power requirements of the reference circuits. In this paper we present a p-HEI device that operates by directly exploiting the self-limiting capability of an energy transducer when driving the process of hot-electron injection in a pMOS floating-gate transistor. As a result, the p-HEI device can activate itself at input power levels less than 5 nW. Using a prototype fabricated in a 0.5-μm bulk CMOS process we validate the functionality of the proposed injector and show that for a fixed input power, its dynamics is quasi-linear with respect to time. The paper also presents measurement results using a cadaver phantom where the fabricated p-HEI device has been integrated with a piezoelectric transducer and is used for self-powered monitoring of mechanical activity.