Nonvolatile memory based on solid electrolytes
Nonvolatile memory based on solid electrolytes
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基于固体电解质的非易失性存储器
DOI：
10.1109/nvmt.2004.1380792
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
M. Mitkova
中科院分区：
文献类型：
--
作者：
M. Kozicki;C. Gopalan;Muralikrishnan Balakrishnan;Mira Park;M. Mitkova
可编程金属化电池（PMC）存储器利用电化学控制固体电解质薄膜中的纳米级金属量。银或铜层和与含Ag/sup +/或Cu/sup 2+/-的电解质膜接触形成的惰性电极形成一种装置，其中利用由金属离子还原引起的大的非挥发性电阻变化来存储信息。关键特性是低电压、低电流、快速写入和擦除、良好的保留和耐用性，以及能够物理缩放到几十纳米的存储单元。本工作描述了PMC器件的工作原理，并给出了基于Ag-Ge-Se、Ag-Ge-S和Cu-WO/sub - 3/固体电解质的直径从微米级到纳米级的电池的代表性结果。
Programmable metallization cell (PMC) memory utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte. A silver or copper layer and an inert electrode formed in contact with a Ag/sup +/or Cu/sup 2+/-containing electrolyte film creates a device in which information is stored using large nonvolatile resistance change caused by the reduction of the metal ions. Key attributes are low voltage, low current, rapid write and erase, good retention and endurance, and the ability for the storage cells to be physically scaled to a few tens of nm. This work describes the principle of operation of PMC devices and presents representative results from cells with diameters ranging from micron scale to nanoscale dimensions based on Ag-Ge-Se, Ag-Ge-S, and Cu-WO/sub 3/ solid electrolytes.