Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility
Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility
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DOI：
10.1021/acs.jpcc.6b06673
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发表时间：
2016-09
影响因子：
3.7
通讯作者：
Chao Xin;Jiaxin Zheng;Yantao Su;Shuankui Li;Bingkai Zhang;Yancong Feng;F. Pan
中科院分区：
文献类型：
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作者：
Chao Xin;Jiaxin Zheng;Yantao Su;Shuankui Li;Bingkai Zhang;Yancong Feng;F. Pan
作为黑磷的化合物类似物，提出了一种新的二维SnS层半导体。基于最先进的理论计算，我们确认这种2D SnS层是热稳定和动态稳定的，并且可以从α相SnS块体材料中机械剥离。2D SnS层具有间接带隙，其可以从单层的1.96 eV调谐到六层结构的1.44 eV。有趣的是，随着层数的增加，带隙的减小不是单调的，而是显示出奇偶量子限制效应，因为奇数层结构中自旋轨道耦合的相互作用和反转对称性的缺乏导致能带的各向异性自旋分裂。还发现，这样的2D SnS层显示出高的面内各向异性和高载流子迁移率（数万cm 2 V-1 s-1），甚至优于由电子主导的黑磷的载流子迁移率（上级）。有了这些有趣的电子特性，这种2D SnS层预计将具有...
As a compound analogue of black phosphorus, a new 2D semiconductor of SnS layers is proposed. Based on state-of-the-art theoretical calculations, we confirm that such 2D SnS layers are thermally and dynamically stable and can be mechanically exoliated from α-phase SnS bulk materials. The 2D SnS layer has an indirect band gap that can be tuned from 1.96 eV for the monolayer to 1.44 eV for a six-layer structure. Interestingly, the decrease of the band gap with increasing number of layers is not monotonic but shows an odd–even quantum confinement effect, because the interplay of spin–orbit coupling and lack of inversion symmetry in odd-numbered layer structures results in anisotropic spin splitting of the energy bands. It was also found that such 2D SnS layers show high in-plane anisotropy and high carrier mobility (tens of thousands of cm2 V–1 s–1) even superior to that of black phosphorus, which is dominated by electrons. With these intriguing electronic properties, such 2D SnS layers are expected to have ...