Solar Light Photodetectors Based on Nanocrystalline Zinc Oxide Cadmium Doped/p-Si Heterojunctions
Solar Light Photodetectors Based on Nanocrystalline Zinc Oxide Cadmium Doped/p-Si Heterojunctions
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DOI：
10.1007/s12633-017-9656-4
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发表时间：
2019-02
期刊：
影响因子：
3.4
通讯作者：
Bestoon Anwer Hamad Ameen;A. Yildiz;W. Farooq;F. Yakuphanoglu
中科院分区：
文献类型：
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作者：
Bestoon Anwer Hamad Ameen;A. Yildiz;W. Farooq;F. Yakuphanoglu
在p型Si衬底上沉积了透明的未掺杂和Cd掺杂ZnO薄膜，制成Cd-ZnO/p-Si二极管。Cd掺杂ZnO薄膜具有多晶结构。透射率的测量表明，该膜具有从47%到92%的范围内的UV和可见光区的透明度。薄膜的光学带隙被发现是从3.27至3.19 eV的Cd含量。分析了二极管在不同光照下的光电特性。未掺杂和Cd掺杂的ZnO薄膜/p-硅器件表现出光伏行为与所获得的光伏参数。通过电容电压（C-V）测量分析了二极管中界面态的连续分布。具有0.1%Cd掺杂的ZnO的二极管在所有二极管中表现出最高的光敏性，光响应度为3.6 × 10 - 4。我们认为，所制备的CdZnO基二极管可用作光探测器和光电子通信。
The transparent undoped and Cd doped ZnO thin films were deposited on p-type Si substrates to fabricate Cd-ZnO/p-Si diodes. The Cd doped ZnO thin films exhibited a polycrystalline structure. The transmittance measurements indicate that the films have transparency ranging from 47% to 92% for the UV and visible regions. The optical band gap of the films were found to be ranging from 3.27 to 3.19 eV with Cd content. The photoelectrical properties of the diodes under various illuminations were analyzed. The undoped and Cd doped ZnO thin films/p-silicon devices exhibit a photovoltaic behavior with the obtained photovoltaic parameters. The continuous distribution of interface states in the diodes is analyzed by capacitance voltage (C-V) measurements. The diode having 0.1% Cd doped Zno showed the highest photosensitivity in all the diodes with the photoresponsivity of 3.6 x10− 4. We suggest that the fabricated CdZnO based diodes can be used as photodetector in optic and optoelectronic communications.