Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
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生长和退火条件对分子束外延生长Ge/Si(001)弛豫层参数的影响
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
P. Yunin
中科院分区：
文献类型：
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作者：
D. Yurasov;A. I. Bobrov;V. Danil’tsev;A. Novikov;D. Pavlov;E. Skorokhodov;M. Shaleev;P. Yunin
研究了Ge层厚度和退火条件对Ge/Si（001）弛豫层参数的影响。得到了Ge层厚度、退火温度、退火时间以及氢气气氛对穿透位错密度和表面粗糙度的影响。通过优化生长和退火条件，获得了厚度小于1 μ m、穿透位错密度约为107cm-2、均方根粗糙度小于1nm的弛豫Ge/Si（001）层。
Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 107 cm–2 and a root mean square roughness of less than 1 nm are obtained.