Time-resolved photoluminescence spectroscopy of resonant tunneling in a GaAs-AlAs triple-barrier structure.
Time-resolved photoluminescence spectroscopy of resonant tunneling in a GaAs-AlAs triple-barrier structure.
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GaAs-AlAs 三重势垒结构中共振隧道效应的时间分辨光致发光光谱。
DOI：
10.1103/physrevb.50.17309
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
von Klitzing K
中科院分区：
文献类型：
--
作者：
Bertram;Grahn;Van Hoof C;Jan Genoe;Borghs;Ruehle;von Klitzing K
利用时间分辨光致发光光谱研究了电子和空穴在非对称GaAs-AlAs三势垒结构中的输运。载流子只在二极管的GaAs接触区中被激发，通过选择低于量子阱状态的吸收边的激发能量。的强度，半宽度，和时间发展的量子阱基态跃迁的光致发光信号的研究通过扫描所施加的偏压通过隧穿共振。发现光生电子的共振隧穿发生在短于约50 ps的时间尺度上，而空穴的共振转移需要约200 ps。然而，这两种类型的载流子的非共振隧穿时间都在1 ns的量级上。
Transport of electrons and holes through an asymmetric GaAs-AlAs triple-barrier structure is investigated using time-resolved photoluminescence spectroscopy. Carriers are excited in the GaAs contact regions of the diode only, by choosing the excitation energy below the absorption edge of the quantum-well states. The intensity, half width, and temporal development of the photoluminescence signal of the quantum-well ground-state transitions are investigated by sweeping the applied bias through the tunneling resonances. Resonant tunneling of photocreated electrons is found to occur on a time scale shorter than about 50 ps, whereas resonant transfer of holes takes about 200 ps. Nonresonant tunneling times of both types of carriers, however, are on the order of 1 ns.