Trends in power semiconductor devices
Trends in power semiconductor devices
复制标题
DOI：
10.1109/16.536818
复制
发表时间：
1996-10-01
影响因子：
3.1
通讯作者：
Baliga, BJ
中科院分区：
文献类型：
--
作者：
Baliga, BJ
本文综述了电力半导体器件技术的最新发展趋势，这些发展趋势导致电力电子系统功率损耗的改善。在低压（100 V）功率整流器方面，硅P-i-N整流器仍占主导地位，但随着硅MPS整流器的推出以及GaAs和SiC肖特基整流器的推出，有望取得重大进展。功率开关技术也在取得同样重要的进展。硅双极型功率晶体管在低压下已被硅功率MOSFET所取代，
This paper reviews recent trends in power semiconductor device technology that are leading to improvements in power losses for power electronic systems. In the case of low voltage (100 V) power rectifiers, the silicon P-i-N rectifier continues to dominate but significant improvements are expected by the introduction of the silicon MPS rectifier followed by the GaAs and SiC based Schottky rectifiers.Equally important developments are occurring in power switch technology. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low voltage (