Reduction of Threading Dislocation Density in 2H-AIN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
Reduction of Threading Dislocation Density in 2H-AIN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
复制标题
通过最大限度地减少生长前无意的活性氮暴露，降低在 6H-SiC(0001) 上生长的 2H-AIN 中的螺纹位错密度
作者：
H.Okumura;T.Kimoto;J.Suda
