ENHANCED ELECTRON INJECTION INTO LIGHT-EMITTING DIODES VIA INTERFACIAL TUNNELING
ENHANCED ELECTRON INJECTION INTO LIGHT-EMITTING DIODES VIA INTERFACIAL TUNNELING
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DOI：
10.1063/1.124200
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发表时间：
1999-06
影响因子：
4
通讯作者：
U. Wolf;H. Bässler
中科院分区：
文献类型：
--
作者：
U. Wolf;H. Bässler
以前的蒙特卡罗模拟跳跃注入到随机有机电介质已扩展到包括通过薄无机绝缘体的隧穿效应。界面的影响已被解释的事实，即电子的衰减长度是大得多的强结合的无机固体相比，范德华键合的有机。根据系统的参数，显着改善喷射的预测。
A previous Monte Carlo simulation for hopping injection into a random organic dielectric has been extended to include the effect of tunneling through a thin inorganic insulator. The effect of the interface has been explained upon the fact that the attenuation length of an electron is much larger in a strongly bonded inorganic solid as compared to a van-der-Waals bonded organic. Depending upon the system parameters, significant improvement of injection is predicted.