Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
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DOI：
10.1063/1.101656
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发表时间：
1989-09
影响因子：
4
通讯作者：
J. Olson;R. Ahrenkiel;D. Dunlavy;B. Keyes;A. Kibbler
中科院分区：
文献类型：
--
作者：
J. Olson;R. Ahrenkiel;D. Dunlavy;B. Keyes;A. Kibbler
利用时间分辨光致发光技术，研究了金属有机化学气相沉积制备的Ga0.5In0.5P/GaAs/Ga0.5In0.5P双异质结构的光电性能。为了比较，还研究了使用Al0.4Ga0.6As/GaAs和Al0.5In0.5P/GaAs晶格匹配异质界面的类似结构。对于Ga0.5In0.5P/GaAs异质结构，我们发现在Ga0.5In0.5P/GaAs界面处的复合速度可以小于1.5 cm/s。结果表明，在未掺杂的GaAs双异质结构中，光致发光衰减时间长达14 μs。该光致发光衰变时间随温度变化为T1.59，具有辐射复合的特点，不受表面或体非辐射复合过程的限制。对于本研究检测的Al0.4Ga0.6As/GaAs和Al0.5In0.5P/GaAs异质结构，界面复合速度上限分别为210和900 cm/s。
Using time‐resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs lattice‐matched heterointerfaces were also examined. For the Ga0.5In0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.