Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition
Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition
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DOI：
10.1116/1.4903935
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
Shang Zhu;Hongliang Lu;Qiuxiang Zhang;Y. Zhang;Qingqing Sun;P. Zhou;S. Ding;David-Wei Zhang
中科院分区：
文献类型：
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作者：
Shang Zhu;Hongliang Lu;Qiuxiang Zhang;Y. Zhang;Qingqing Sun;P. Zhou;S. Ding;David-Wei Zhang
采用热原子层沉积法在Si（100）衬底上制备了AlN/ZnO双层异质结构。X射线衍射结果表明，非晶AlN覆盖层提高了多晶ZnO层的结晶度。与ZnO薄膜相比，具有10.7 nm AlN覆盖层的ZnO/AlN双层膜具有3倍增强的近带边（NBE）发射的光致发光测量。此外，通过600 °C的快速热退火，ZnO的近带边发射可进一步提高10倍。讨论了氮化铝覆盖层和热处理后NBE发射增强的机理。这些结果表明，薄AlN层的涂层和顺序的热处理可以有效地定制ZnO薄膜的发光性能。
The AlN/ZnO bilayer heterostructures were deposited on Si (100) substrate by thermal atomic layer deposition. X-ray diffraction results show that the crystallinity of polycrystalline ZnO layer is enhanced by amorphous AlN capping layer. Compared with ZnO thin film, ZnO/AlN bilayer with 10.7 nm AlN capping layer exhibits three times enhanced near band edge (NBE) emission from the photoluminescence measurements. In addition, the near band edge emission from the ZnO can be further increased by ∼10 times through rapid thermal annealing at 600 °C. The underlying mechanisms for the enhancement of the NBE emission after coating AlN capping layer and thermal treatment are discussed. These results suggest that coating of a thin AlN layer and sequential thermal treatments can effectively tailor the luminescence properties of ZnO film.