Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts
Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts
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DOI：
10.1143/jjap.50.064101
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发表时间：
2011-06-01
影响因子：
1.5
通讯作者：
Tokuda, Yasunori
中科院分区：
文献类型：
--
作者：
Nanjo, Takuma;Motoya, Tsukasa;Tokuda, Yasunori
在具有AlN隔离层的AlGaN/GaN高电子迁移率晶体管(HEMT)中，由于AlN隔离层具有极宽的带隙，显著降低了接触电阻，因此降低欧姆接触电阻是非常重要的。我们采用了Si离子注入掺杂来解决这个问题，并成功地获得了与没有AlN隔离层的HEMT相当的足够低的接触电阻。在硅离子注入源/漏接触的AlGaN/AlN/GaN HEMT中，由于AlN隔离层插入的另一种效应，发现正向肖特基栅电流减小，这使得在晶体管操作中施加高栅电压成为可能。结合2DEG性能的改善，观察到漏电流密度显著提高了25%-30%。(C)2011年日本应用物理学会
In AlGaN/GaN high-electron-mobility transistors (HEMTs) with an AlN spacer layer, which improves two-dimensional electron gas (2DEG) properties, it is important to decrease ohmic contact resistance because an AlN spacer layer with an extremely wide band gap decreases the contact resistance significantly. We employed Si ion implantation doping to solve this problem and successfully obtained a sufficiently low contact resistance equivalent to that of HEMT without an AlN spacer layer. In the fabricated AlGaN/AlN/GaN HEMTs with Si-ion-implanted source/drain contacts, as another effect of AlN spacer layer insertion, a reduction in the forward Schottky gate current was found, which made it possible to apply a high gate voltage in the transistor operation. Combined with the improvement in 2DEG properties, a marked enhancement in drain current density of 25-30% was observed. (C) 2011 The Japan Society of Applied Physics