Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes
Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes
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DOI：
10.1063/1.4794078
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发表时间：
2013-03-04
影响因子：
4
通讯作者：
Kelly, A. E.
中科院分区：
文献类型：
--
作者：
Green, Richard P.;McKendry, Jonathan J. D.;Kelly, A. E.
我们报告的调制带宽测量的InGaN基量子阱发光二极管发射在450和520 nm波长的数量。它示出，对于这些设备的数据可以解释在俄歇复合方面，通过考虑到的辐射系数的载流子密度的依赖性。我们发现450 nm处的俄歇系数值为（1 +/- 0.3）x 10（-29）cm（6）s（-1），520 nm处的俄歇系数值为（3 +/- 1）x 10（-30）cm（6）s（-1）。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4794078]
We report modulation bandwidth measurements on a number of InGaN-based quantum well LEDs emitting at 450 and 520 nm wavelengths. It is shown that for these devices the data can be interpreted in terms of Auger recombination, by taking account of the carrier density dependence of the radiative coefficient. We find values for the Auger coefficient of (1 +/- 0.3) x 10(-29) cm(6) s(-1) at 450 nm and (3 +/- 1) x 10(-30) cm(6) s(-1) at 520 nm. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794078]