Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge
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预非晶化 Ge 中自填隙介导的 B 瞬时增强扩散
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
F. Priolo
中科院分区：
文献类型：
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作者：
E. Napolitani;G. Bisognin;E. Bruno;M. Mastromatteo;G. Scapellato;S. Boninelli;D. Salvador;S. Mirabella;C. Spinella;A. Carnera;F. Priolo
研究表明，预非晶化 Ge 中间隙型末端 (EOR) 损伤的溶解会在 350°C 以上的温度下诱导外延生长的硼 δ 的瞬时增强扩散，并在 420°C 以上达到饱和。 B 扩散事件与测量到的与 EOR 损伤相关的正应变定量相关，作为退火温度的函数，EOR 损伤溶解的能垒为 2.1±0.3 eV。这些结果明确表明，B 通过自填隙辅助的机制在 Ge 中扩散，并在 Ge 中的杂质扩散建模中考虑了填隙注入损伤。
The dissolution of interstitial-type end-of-range (EOR) damage in preamorphized Ge is shown to induce a transient enhanced diffusion of an epitaxially grown boron delta at temperatures above 350 °C that saturates above 420 °C. The B diffusion events are quantitatively correlated with the measured positive strain associated with the EOR damage as a function of the annealing temperature with an energy barrier for the EOR damage dissolution of 2.1±0.3 eV. These results unambiguously demonstrate that B diffuses in Ge through a mechanism assisted by self-interstitials, and impose considering the interstitial implantation damage for the modeling of impurity diffusion in Ge.