(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires
(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires
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用于优化 T 形量子线的 (110) 取向 GaAs/Al0.3Ga0.7As 量子阱
DOI：
10.1063/1.117896
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发表时间：
1996
影响因子：
4
通讯作者：
J. Hvam
中科院分区：
文献类型：
--
作者：
H. Gislason;C. Sørensen;J. Hvam
（110）取向的GaAs/Al 0. 3 Ga 0. 7 As量子威尔斯阱的高度控制对于优化的T形GaAs/AlGaAs量子线的生长是非常重要的。我们从理论上和实验上研究了在（110）取向衬底和解理边上生长的宽为20-200埃的（110）取向GaAs量子威尔斯阱。光致发光跃迁能量被发现是在所有的阱宽与理论吻合良好。平均阱宽可控制到1单层的精度和3.7 A的有效阱宽波动来自光致发光线宽。的势垒材料的铝含量的生长速率校准同意从（110）Al 0.3Ga 0.7As外延层的束缚激子发射的估计在1%以内。
High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T‐shaped GaAs/AlGaAs quantum wires. We investigate theoretically and experimentally 20–200 A wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 A is derived from the photoluminescence linewidths. The growth rate calibration of the aluminum content of the barrier material agrees within 1% with an estimate from the bound exciton emission of (110) Al0.3Ga0.7As epilayers.