Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
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DOI：
10.1063/1.3488825
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发表时间：
2010-09-13
影响因子：
4
通讯作者：
Tansu, Nelson
中科院分区：
文献类型：
--
作者：
Zhang, Jing;Zhao, Hongping;Tansu, Nelson
分析了高Al含量AlGaN量子威尔斯（QW）的深紫外激光增益特性。分析了晶场分裂空穴（CH）和重空穴（HH）带交叉对AlN势垒AlGaN量子阱增益特性的影响。高Al含量的AlGaN量子阱的TM自发辐射复合率显著提高，这归因于导电-CH带之间的强跃迁。对于高Al含量的AlGaN量子阱，可以实现大的TM偏振材料增益，这表明TM激光用于发射类似于220-230 nm的激光器的可行性。(C)2010年美国物理学会。[doi：10.1063/1.3488825]
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands crossover on the gain characteristics of AlGaN QW with AlN barriers is analyzed. Attributing to the strong transition between conduction-CH bands, the TM spontaneous emission recombination rate is enhanced significantly for high Al-content AlGaN QWs. Large TM-polarized material gain is shown as achievable for high Al-content AlGaN QWs, which indicates the feasibility of TM lasing for lasers emitting at similar to 220-230 nm. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488825]