Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering
Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering
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DOI：
10.1063/1.1978984
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发表时间：
2005-06
影响因子：
4
通讯作者：
T. Yoshitake;D. Nakagauchi;T. Ogawa;M. Itakura;N. Kuwano;Y. Tomokiyo;T. Kajiwara;K. Nagayama
中科院分区：
文献类型：
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作者：
T. Yoshitake;D. Nakagauchi;T. Ogawa;M. Itakura;N. Kuwano;Y. Tomokiyo;T. Kajiwara;K. Nagayama
在室温条件下，在Si（111）表面通过目标直流溅射可以外延生长出表面光滑的铁磁Fe3Si薄膜。外延关系为Fe3Si（111）‖Si（111）与Fe3Si[11¯0]‖Si[1¯10]。利用x射线衍射的消光规律，证实生成的Fe3Si具有B2结构，而不是DO3结构。薄膜的饱和磁化强度为960emu∕cm3，略低于DO3-Fe3Si的饱和磁化强度。观察到磁化易轴在膜面上沿[11¯0]方向。
Ferromagnetic Fe3Si thin films with an extremely smooth surface morphology can be epitaxially grown on Si(111) at room temperature by facing target direct-current sputtering. The epitaxial relationship is Fe3Si(111)‖Si(111) with Fe3Si[11¯0]‖Si[1¯10]. By the application of the extinction rule of x-ray diffraction, the generated Fe3Si was confirmed to possess a B2 structure and not a DO3 one. The film showed a saturation magnetization value of 960emu∕cm3, which was slightly lower than that of bulk DO3-Fe3Si. It was observed that the magnetization easy axis was along the [11¯0] direction in the film plane.