Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
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DOI：
10.1063/1.119068
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发表时间：
1997-01
影响因子：
4
通讯作者：
G. Yusa;H. Sakaki
中科院分区：
文献类型：
--
作者：
G. Yusa;H. Sakaki
在77 K温度下研究了GaAs/n-AlGaAs新型结构中InAs量子点对光生载流子的俘获。结果表明，在给定的栅压Vg下，由于量子点对空穴的捕获，二维电子的浓度Ns随着光照的持续增加。通过栅极电压和光生载流子产生的相互作用，在Ns-Vg特性中观察到明显的滞后。通过光照射实现了电子迁移率的急剧变化，其系数为19。提出了该器件在新型光控浮点存储器中的应用。
The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested.