Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates

Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates
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DOI:
10.1021/nn201207c
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发表时间:
2011-09-01
期刊:
影响因子:
17.1
通讯作者:
Ruoff, Rodney S.
Ruoff, Rodney S.
中科院分区:
材料科学1区
文献类型:
--
作者:
Suk, Ji Won;Kitt, Alexander;Ruoff, Rodney S.

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开发了可重复的干转移和湿转移技术,以改善通过化学气相沉积(CVD)在铜箔上生长的大面积单层石墨烯的转移。这里报道的技术允许转移到三种不同类型的基板上:覆盖有浅凹陷的基板、穿孔基板和平坦基板。采用一种新型的干法转移技术制备了石墨烯密封的微室,其中没有捕获液体。干转移技术利用聚二甲基硅氧烷框架,其附着到在石墨烯膜上旋转的聚(甲基丙烯酸甲酯),并且单层石墨烯被转移到具有300 nm深度的浅凹陷上。改进的湿转移到穿孔基板与2.7 μ m直径的孔产生98%的覆盖率的孔覆盖连续膜,允许随时使用拉曼光谱和透射电子显微镜研究CVD生长的单层石墨烯的固有特性。此外,转移到平坦基底上的单层石墨烯具有更少的裂纹和撕裂,以及比先前的转移技术更低的薄层电阻。转移到玻璃上的单层石墨烯膜具有类似于980 Ω/sq的薄层电阻和97.6%的透射率。这些转移技术为制造具有独特配置和增强性能的各种石墨烯器件开辟了可能性。
Reproducible dry and wet transfer techniques were developed to improve the transfer of large-area monolayer graphene grown on copper foils by chemical vapor deposition (CVD). The techniques reported here allow transfer onto three different classes of substrates: substrates covered with shallow depressions, perforated substrates, and flat substrates. A novel dry, transfer technique was used to make graphene-sealed microchambers without trapping-liquid inside. The dry transfer technique utilizes a polydimethylsiloxane frame that attaches to the poly(methyl methacrylate) spun over the graphene film, and the monolayer graphene was transferred onto shallow depressions with 300 nm depth. The improved wet transfer onto perforated substrates with 2.7 mu m diameter holes yields 98% coverage of holes covered with continuous films, allowing the ready use of Raman spectroscopy and transmission electron microscopy to study the intrinsic properties of CVD-grown monolayer graphene. Additionally, monolayer graphene transferred onto flat substrates has fewer cracks and tears, as well as lower sheet resistance than previous transfer techniques. Monolayer graphene films transferred onto glass had a sheet resistance of similar to 980 Omega/sq and a transmittance of 97.6%. These transfer techniques open up possibilities for the fabrication of various graphene devices with unique configurations and enhanced performance.