0.2 V Drive Voltage Substrate Removed Electro-Optic Mach-Zehnder Modulators With MQW Cores at 1.55 μm
0.2 V Drive Voltage Substrate Removed Electro-Optic Mach-Zehnder Modulators With MQW Cores at 1.55 μm
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DOI：
10.1109/jlt.2013.2293345
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发表时间：
2014-02-01
影响因子：
4.7
通讯作者：
Dagli, Nadir
中科院分区：
文献类型：
--
作者：
Dogru, Selim;Dagli, Nadir
报道了采用衬底去除技术的新型电光调制器。epillayer由p-i-n结组成，其中i层由InGaAlAs/InAlAs MQW组成。这就产生了一种具有非常强的垂直约束的光学模式，并且与反向偏置p-i-n结的大电场非常好地重叠。该方法与MQW所带来的较大二次电光系数相结合，显著提高了调制效率。使用这种方法制作的Mach-Zehnder电光调制器在推拉驱动下，在1.55 μ m下，3 (1)mm长的电极具有0.2 V (0.6 V) V-pi，对应于0.06 V.cm的记录调制效率。
Novel electro-optic modulators in compound semiconductor epilayers using substrate removal techniques are reported. Epilayer consists of a p-i-n junction in which i layer is composed of an InGaAlAs/InAlAs MQW. This creates an optical mode with very strong vertical confinement and overlapping very well with the large electric field of the reverse biased p-i-n junction. This approach combined with the large quadratic electro-optic coefficient due to MQW improves efficiency of modulation significantly. Mach-Zehnder electro-optic modulators fabricated using this approach has 0.2 V (0.6 V) V-pi for 3 (1) mm long electrodes at 1.55 mu m under push pull drive corresponding to record modulation efficiency of 0.06 V.cm.