Graphene transistors fabricated via transfer-printing in device active-areas on large wafer
Graphene transistors fabricated via transfer-printing in device active-areas on large wafer
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DOI：
10.1021/nl072566s
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发表时间：
2007-12-01
期刊：
影响因子：
10.8
通讯作者：
Chou, Stephen Y.
中科院分区：
文献类型：
--
作者：
Liang, Xiaogan;Fu, Zengli;Chou, Stephen Y.
我们演示了一种方法，该方法使用印模上的柱子从石墨上切割和剥离石墨烯岛，然后使用转移印刷将印模上的岛放置到基板上的器件活性区域中，放置精度可能达到纳米级。可以重复该过程以覆盖整个晶圆上的所有器件有源区域。我们还报告了由印刷石墨烯制造的晶体管。这些晶体管的空穴迁移率和电子迁移率分别为 3735 cm(2)/V-s 和 795 cm(2)/V-s，最大驱动电流为 1.7 mA/μm（V-DS = 1 V 时），这是室温下报道的最高电流之一。还研究了各种转移层和固定层分别对将石墨烯粘附到印模和基底上的影响。
We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm(2)/V-s, respectively, and a maximum drive-current of 1.7 mA/mu m (at V-DS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated.