RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
RHEED Study of InSb Films Grown by Molecular Beam Epitaxy
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分子束外延生长 InSb 薄膜的 RHEED 研究
DOI：
10.1143/jjap.19.l417
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发表时间：
1980
影响因子：
1.5
通讯作者：
K. Sugiyama
中科院分区：
文献类型：
--
作者：
K. Oe;S. Ando;K. Sugiyama
利用反射高能电子衍射技术原位研究了分子束外延在（111）A、（111）B和（001）取向InSb衬底上生长的InSb薄膜的表面结构，并报道了表面重构与Sb和in的相对到达率和表面温度的关系。当Sb/ in比为1时，（111）B和（001）表面结构发生变化，转变时的比值不依赖于衬底温度。这种行为被解释为Sb原子（或分子）的粘着系数对于Sb/In比\ con1几乎是一致的。
The surface structures of InSb films grown on (111)A, (111)B and (001)-oriented InSb substrates by molecular beam epitaxy were investigated in situ with a reflection high-energy electron diffraction technique, and the dependences of the surface reconstructions on the relative arrival rates of Sb and In and the surface temperature are reported. The change in surface structures on the (111)B and (001) faces occurs when the Sb/In ratio is about unity, and the ratio at transition does not depend on the substrate temperature. This behavior is interpreted as meaning that the sticking coefficient of Sb atoms (or molecules) is nearly unity for the Sb/In ratio \cong1.