Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale

Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale
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吸收层厚度为微米和亚微米级的薄膜 CdTe 太阳能电池

DOI:
10.1063/1.3644160
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发表时间:
2011-10-03
影响因子:
4
通讯作者:
Wang, Deliang
Wang, Deliang
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Bai, Zhizhong;Yang, Jun;Wang, Deliang

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CdTe thin film solar cell with an absorber layer as thin as 0.5 mu m was fabricated. An efficiency of 7.9% was obtained for a 1-mu m-thick CdTe solar cell. An increased intensity of deep recombination states in the band gap, which was responsible for the reduced open-circuit voltage and fill factor for ultra-thin solar cells, was induced due to the not-well-developed polycrystalline CdTe microstructure and the CdS/CdTe heterojunction and the presence of Cu in the back contact. The experimental results presented in this study demonstrated that 1-mu m-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency. (C) 2011 American Institute of Physics. [doi :10.1063/1.3644160]