Physical model of threshold switching in NbO2 based memristors
Physical model of threshold switching in NbO2 based memristors
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DOI：
10.1039/c5ra19300a
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发表时间：
2015-01-01
期刊：
影响因子：
3.9
通讯作者：
Mikolajick, T.
中科院分区：
文献类型：
--
作者：
Slesazeck, S.;Maehne, H.;Mikolajick, T.
本文研究了NbO 2阈值开关效应的起源。据发现，该效果是独立的金属-绝缘体-过渡，但可以解释由陷阱辅助的Frenkel-Poole像导电机制相结合的一个温和的温度增加只有150 K，由于焦耳加热。这些研究结果导致的物理为基础的模型，这是纯电气性质的发展，并解释发生的阈值效应，以及观察到的负微分电阻行为在NbO 2。
This paper investigates the origin of the threshold switching effect in NbO2. It is found that the effect is independent of the metal-insulator-transition but can be explained by a trap-assisted Frenkel-Poole like conduction mechanism in combination with a moderate temperature increase by only 150 K due to Joule heating. These findings lead to the development of a physics based model which is of pure electrical nature and explains the occurrence of the threshold effect as well as the negative-differential resistance behavior observed in NbO2.