Measurement of VLSI power supply current by electron-beam probing
Measurement of VLSI power supply current by electron-beam probing
复制标题
通过电子束探测测量 VLSI 电源电流
DOI:
10.1109/4.135341
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发表时间:
1992
影响因子:
5.4
通讯作者:
R. Franch
中科院分区:
文献类型:
--
作者:
K. Jenkins;R. Franch
The measurement of power supply noise and current by electron-beam probing is described. Noise measurements can be made on the chip under test, and current measurements can be made on the circuit board. It is noted that power supply voltages are obtained simultaneously. This measurement method is particularly useful when combined with a larger program of circuit characterization, or design verification, by electron-beam probing. >