Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
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DOI：
10.1063/5.0031468
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发表时间：
2020-11
影响因子：
4
通讯作者：
H. Foronda;D. Hunter;Mike Pietsch;L. Sulmoni;A. Muhin;Sarina Graupeter;N. Susilo;M. Schilling;J. Enslin;K. Irmscher;R. Martin;T. Wernicke;M. Kneissl
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文献类型：
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作者：
H. Foronda;D. Hunter;Mike Pietsch;L. Sulmoni;A. Muhin;Sarina Graupeter;N. Susilo;M. Schilling;J. Enslin;K. Irmscher;R. Martin;T. Wernicke;M. Kneissl
本文研究了（11-22）取向半极性AlxGa 1 −xN：Si的生长和导电性。AlxGa 1 −xN：Si（x = 0.60 ± 0.03和x = 0.80 ± 0.02）层在不同的SiH 4分压下生长，并在室温下使用霍尔测量来确定其电性能。通过波长色散X射线光谱和X射线衍射测量铝摩尔分数，并且通过波长色散X射线光谱和二次离子质谱测量Si浓度。对于x = 0.6和x = 0.8，实现了低至0.024 Ω cm和0.042 Ω cm的层折射率。对于这两种铝的摩尔分数，电阻率表现出最小值与Si浓度的增加，这可以解释补偿由于在高掺杂水平的阳离子空位络合物的形成。自补偿的发病发生在较大的估计Si浓度为较大的Al含量。
In this work, the growth and conductivity of semipolar AlxGa1−xN:Si with (11-22) orientation are investigated. AlxGa1−xN:Si (x = 0.60 ± 0.03 and x = 0.80 ± 0.02) layers were grown with different SiH4 partial pressures, and the electrical properties were determined using Hall measurements at room temperature. The aluminum mole fraction was measured by wavelength dispersive x-ray spectroscopy and x-ray diffraction, and the Si-concentration was measured by wavelength dispersive x-ray spectroscopy and secondary ion mass spectroscopy. Layer resistivities as low as 0.024 Ω cm for x = 0.6 and 0.042 Ω cm for x = 0.8 were achieved. For both aluminum mole fractions, the resistivity exhibits a minimum with the increasing Si concentration, which can be explained by compensation due to the formation of cation vacancy complexes at high doping levels. The onset of self-compensation occurs at larger estimated Si concentrations for larger Al contents.