Monolithic Integration of Tunnel Diode-Based Inverters on Exact (001) Si Substrates
Monolithic Integration of Tunnel Diode-Based Inverters on Exact (001) Si Substrates
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基于隧道二极管的逆变器在精确 (001) Si 基板上的单片集成
DOI：
10.1109/led.2016.2552219
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发表时间：
2016
影响因子：
4.9
通讯作者：
K. Lau
中科院分区：
文献类型：
--
作者：
Yu Han;Qiang Li;K. Lau
本文展示了在精确的（001）Si衬底上单片集成隧道二极管反相器，用于未来的高速、低功耗和紧凑型数字电路。采用正向偏置鳍阵列隧道二极管作为驱动，反向偏置鳍阵列隧道二极管作为负载，制作了一种双态逆变器。利用反向偏置隧道二极管的电阻特性和硅衬底上的预定义图案，实现了片上操作，降低了制造复杂度。
Monolithic integration of tunnel diode-based inverters on exact (001) Si substrates for the future high-speed, low-power, and compact digital circuits is demonstrated. A two-state inverter was fabricated using a forward biased fin-array tunnel diode as drive and a reverse-biased counterpart as load. On-chip operation and reduced fabrication complexity were achieved by exploiting the resistive characteristic of the reverse-biased tunnel diodes and the pre-defined patterns on the Si substrate.