Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires
Growth and optical properties of strained GaAs-GaxIn1-xP core-shell nanowires
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DOI：
10.1021/nl051304s
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发表时间：
2005-10-01
期刊：
影响因子：
10.8
通讯作者：
Samuelson, L
中科院分区：
文献类型：
--
作者：
Sköld, N;Karlsson, LS;Samuelson, L
采用金属有机物气相外延法制备了GaAs-Ga_xIn_（1-x）P（0.34 < x < 0.69）核壳纳米线。纳米线芯在低温（450摄氏度）下生长，其中在侧面上仅发生很少的生长。通过在较高温度（600摄氏度）下生长来添加壳，其中侧面生长的动力学阻碍被克服。在5 K下对单个纳米线的光致发光测量表明，与未封端的样品相比，发射效率增加了2至3个数量级。研究了应变对晶格失配核壳纳米线带隙的影响，并通过基于形变势理论的计算得到证实。
We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.