Transmission electron microscopy observation of high-temperature γ-FeSi2 precipitates formed in Si by iron implantation using a metal vapor vacuum arc ion source
Transmission electron microscopy observation of high-temperature γ-FeSi2 precipitates formed in Si by iron implantation using a metal vapor vacuum arc ion source
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DOI：
10.1063/1.1594832
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发表时间：
2003-07
影响因子：
4
通讯作者：
Yang Gao;S. Wong;W. Cheung;G. Shao;K. Homewood
中科院分区：
文献类型：
--
作者：
Yang Gao;S. Wong;W. Cheung;G. Shao;K. Homewood
本文报道了用金属蒸气真空弧离子源注入铁，然后进行两步退火处理，在硅中形成直径为几十纳米的高温γ-FeSi 2沉淀。结果表明，注入温度和退火条件对FeSi 2沉淀物的形貌和相组成有重要影响。当注入温度较高（约380 °C）时，仅形成β-FeSi 2沉淀物。当注入温度较低（约-100 °C）时，在双步骤退火之后，除了β-FeSi 2之外，还形成与硅衬底共格的γ-FeSi 2沉淀物。
This work reports the observation of high-temperature γ-FeSi2 precipitates of tens of nanometers in diameter embedded in silicon formed by iron implantation using a metal vapor vacuum arc ion source followed by a dual step annealing process. It was found that the implantation temperature and annealing conditions played important roles on the shape and phase formation of the FeSi2 precipitates. When the implantation temperature was high (about 380 °C), only β-FeSi2 precipitates were formed. When the implantation temperature was low (about −100 °C), after the dual step annealing, in addition to β-FeSi2, γ-FeSi2 precipitates coherent with the silicon substrate were formed.