Preparation of SrRuO3 films for advanced CMOS metal gates
Preparation of SrRuO3 films for advanced CMOS metal gates
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先进CMOS金属栅极SrRuO3薄膜的制备
DOI：
10.1016/j.mssp.2004.09.012
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发表时间：
2004
影响因子：
4.1
通讯作者：
C. Cabral
中科院分区：
文献类型：
--
作者：
K. Fröhlich;K. Hušeková;D. Machajdík;R. Lupták;M. Ťapajna;J. Hooker;F. Roozeboom;A. Kobzev;C. Wiemer;S. Ferrari;M. Fanciulli;C. Rossel;C. Cabral
我们报道了SrRuO 3薄膜作为CMOS器件的金属栅的生长和性能。在500°C下，通过金属有机化学气相沉积在Si衬底上生长具有热SiO2、原子层沉积的Al 2 O3和HfO 2电介质膜的膜。薄膜的室温电阻率低于1 m Ωcm。我们用卢瑟福背散射和二次离子质谱分析了SrRuO_3金属栅和氧化膜的界面。在氧气气氛和形成气体（90%N2 + 10%H2）中退火用于测试SrRuO 3金属栅极的稳定性。最后，通过高频电容-电压测量研究了金属栅叠层的电学特性。分析了金属有机化学气相生长SrRuO 3栅电极在CMOS器件集成方面的特性。
We report on the growth and properties of SrRuO3films for application as metal gates for CMOS devices. The films were grown at 500°C by metal-organic chemical vapour deposition on Si substrates with thermal SiO2, atomic-layer deposited Al2O3and HfO2dielectric films. The films exhibit room temperature resistivity below 1mΩcm. We have analysed the interface between the SrRuO3metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N2+10% H2) were employed for testing the stability of the SrRuO3metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance–voltage measurements. The properties of metal-organic chemical vapour grown SrRuO3gate electrode are analysed with regards to integration in CMOS devices.