Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires
Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires
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DOI：
10.1021/acs.nanolett.5b01188
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发表时间：
2015-07-01
期刊：
影响因子：
10.8
通讯作者：
Weber, Walter M.
中科院分区：
文献类型：
--
作者：
Jeon, Dae-Young;Pregl, Sebastian;Weber, Walter M.
硅纳米线（Si-NW）基薄膜晶体管（TFT）被认为是下一代柔性和可穿戴电子产品以及高性能传感器应用的有希望的候选者。在这里，我们已经制作了双极肖特基势垒（SB）TFT的硅纳米线的平行阵列组成，并进行了深入的研究，其电气性能和工作机制，通过几个电气参数提取泡沫的沟道长度缩放为基础的方法。特别是，新提出的电流-电压（I-V）等值线图清楚地阐明了双极SB-TFT的独特操作机制，由NiSi 2和Si-NW之间的肖特基结控制。此外，它揭示了第一次在SB基FET的重要的内部静电沟道和外部施加的电压之间的耦合。这项工作提供了有用的信息，实现实际电路的双极SB-TFT，可以转移到不同的衬底技术和应用。
Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation mechanism through several electrical parameters extracted froth the channel length scaling based method. Especially, the newly suggested current voltage (I-V) contour map clearly elucidates the unique operation mechanism of the ambipolar SB-TFTs, governed by Schottky-junction between NiSi2 and Si-NW. Further, it reveals for the first-time in SB based FETs the important internal electrostatic coupling between the channel and externally applied voltages. This work provides helpful information for the realization of practical circuits with ambipolar SB-TFTs that can be transferred to different substrate technologies and applications.