Temperature Dependence of Impact Ionization Coefficients in 4H-SiC
Temperature Dependence of Impact Ionization Coefficients in 4H-SiC
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DOI：
10.4028/www.scientific.net/msf.778-780.461
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发表时间：
2014-02
期刊：
影响因子：
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通讯作者：
H. Niwa;J. Suda;T. Kimoto
中科院分区：
文献类型：
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作者：
H. Niwa;J. Suda;T. Kimoto
在室温和高达200℃的高温下测量了4H-SiC的冲击电离系数。在两个互补的光电二极管中进行光电倍增测量，测量空穴（Mp）和电子（Mn）的倍增因子，并提取电离系数。利用得到的电离系数计算的击穿电压与本研究的测量值一致，也适用于其他已报道的PiN二极管和mosfet。在高温测量中，击穿电压表现为正温度系数，倍增系数表现为负温度系数。因此，提取的电离系数减小，这可以解释为声子散射的增加。计算得到的击穿电压的温度依赖性不仅与本研究中二极管的测量值吻合，而且与其他文献中PiN二极管的测量值吻合。
Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.