Weak localization in monolayer and bilayer graphene
Weak localization in monolayer and bilayer graphene
复制标题
DOI：
10.1140/epjst/e2007-00224-6
复制
发表时间：
2007-09
期刊：
影响因子：
--
通讯作者：
K. Kechedzhi;E. McCann;V. Fal’ko;H. Suzuura;T. Ando;B. Altshuler
中科院分区：
文献类型：
--
作者：
K. Kechedzhi;E. McCann;V. Fal’ko;H. Suzuura;T. Ando;B. Altshuler
我们描述了超薄石墨烯薄膜中电导率的弱局域校正，考虑到无序散射和费米表面三角翘曲的影响。电子手性性质在局域化性质中的可能表现受到三角翘曲的阻碍，从而抑制单层石墨烯中的弱反局域化效应和双层石墨烯中的弱局域化效应。由于现实石墨烯片中的原子级尖锐散射体或窄线中的边缘引起的谷间散射往往会恢复微弱的局域化，从而导致两种材料中的负磁阻。
We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.