Thermal-aware device design of nanoscale bulk/SOI FinFETs: Suppression of operation temperature and its variability
Thermal-aware device design of nanoscale bulk/SOI FinFETs: Suppression of operation temperature and its variability
复制标题
纳米级体/SOI FinFET 的热感知器件设计：工作温度及其变化的抑制
DOI：
10.1109/iedm.2011.6131672
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
K. Uchida
中科院分区：
文献类型：
--
作者：
Tsunaki Takahashi;N. Beppu;Kunro Chen;S. Oda;K. Uchida
对体相/SOI FinFET的自热效应进行了系统的研究和比较。结果表明，体结FinFET由于对Si衬底的散热较大，其晶格温度明显较低。对体/SOI FinFET的散热路径进行了研究，分析了器件参数对热特性的影响。结果表明，由于器件参数的变化，体结FinFET表现出更大的温度波动。延长长度的小型化可以大大抑制波动率的波动。结果表明，在SOI FinFET中，MOS界面热阻的影响比体FinFET中的影响更大。
The self-heating effects in Bulk/SOI FinFETs have been systematically investigated and compared. It is demonstrated that lattice temperature is significantly lower in Bulk FinFETs owing to the larger heat dissipation to the Si substrate. Heat dissipation paths in Bulk/SOI FinFETs have been studied and the device-parameter dependence of thermal characteristics has been analyzed. It is demonstrated that the Bulk FinFETs show greater temperature fluctuations resulting from device parameter variations. The fluctuation can be greatly suppressed by miniaturizing the extension length. It is shown that the impact of thermal resistance at the MOS interface is more significant in SOI FinFETs than in Bulk FinFETs.